IS31AP2010E integrated silicon solution, inc. ? www.issi.com 1 rev. 00a, 05/02/2012 mono filter-less class-d audio power amplifier advanced information may 2012 general description the IS31AP2010E is a high efficiency, mono filter-less class-d audio power amplifier. a low noise, filter-less pwm architecture eliminates the output filter, reduces external component count, system cost, and simplifying design. in cellular handsets, the earpiece, speaker phone, and melody ringer speaker can each be driven by the IS31AP2010E. the gain of IS31AP2010E is externally configurable which allows independent gain control from multiple sources by summing signals from each function. IS31AP2010E is available in utqfn-9 packages . it operates from 2.7v to 5.5v over the temperature range of -40c to +85c. features ? supply voltage from 2.7v ~ 5.5v ? high efficiency ? less than 1 a shutdown current ? optimized pwm output stage eliminates lc output filter ? fully differential design reduces rf rectification and eliminates bypass capacitor ? improved cmrr eliminates two input coupling capacitors ? integrated click-and-pop suppression circuitry ? utqfn-9 package ? rohs compliant and 100% lead(pb)-free applications ? wireless or cellular handsets and pdas ? portable dvd player ? notebook pc ? portable radio ? educational toys ? portable gaming typical application circuit out+ gnd IS31AP2010E b1,b2 a3 c3 vcc out- c s 1 f v battery c1 in- in+ a1 0.1 f a2,b3 sdb c2 100k c in+ 0.1 f c in- 0.1 f r in+ 150k r in- 150k differential input shutdown control figure 1 typical application circuit (differential input)
IS31AP2010E integrated silicon solution, inc. ? www.issi.com 2 rev. 00a, 05/02/2012 figure 2 typical application circuit (single-ended input)
IS31AP2010E integrated silicon solution, inc. ? www.issi.com 3 rev. 00a, 05/02/2012 pin configuration package pin configuration (top view) utqfn-9 pin description no. pin description a1 in+ positive audio input. a2, b3 gnd connect to ground. a3 out- negative audio output. b1, b2 vcc power supply. c1 in- negative audio input. c2 sdb enter in shutdown mode when active low. c3 out+ positive audio output. copyright ? ? ? 2011 ? integrated ? silicon ? solution, ? inc. ? all ? rights ? reserved. ? issi ? reserves ? the ? right ? to ? make ? changes ? to ? this ? specification ? and ? its ? products ? at ? any ? time ? without ? notice. ? issi ? assumes ? no ? liability ? arising ? out ? of ? the ? application ? or ? use ? of ? any ? information, ? products ? or ? services ? described ? herein. ? customers ? are ? advised ? to ? obtain ? the ? latest ? version ? of ? this ? device ? specification ? before ? relying ? on ? any ? published ? information ? and ? before ? placing ? orders ? for ? products. ? integrated ? silicon ? solution, ? inc. ? does ? not ? recommend ? the ? use ? of ? any ? of ? its ? products ? in ? life ? support ? applications ? where ? the ? failure ? or ? malfunction ? of ? the ? product ? can ? reasonably ? be ? expected ? to ? cause ? failure ? of ? the ? life ? support ? system ? or ? to ? significantly ? affect ? its ? safety ? or ? effectiveness. ? products ? are ? not ? authorized ? for ? use ? in ? such ? applications ? unless ? integrated ? silicon ? solution, ? inc. ? receives ? written ? assurance ? to ? its ? satisfaction, ? that: ? a.) ? the ? risk ? of ? injury ? or ? damage ? has ? been ? minimized; ? b.) ? the ? user ? assume ? all ? such ? risks; ? and ? c.) ? potential ? liability ? of ? integrated ? silicon ? solution, ? inc ? is ? adequately ? protected ? under ? the ? circumstances
IS31AP2010E integrated silicon solution, inc. ? www.issi.com 4 rev. 00a, 05/02/2012 ordering information industrial range: -40c to +85c order part no. package qty/reel IS31AP2010E-utls2-tr utqfn-9, lead-free 3000
IS31AP2010E integrated silicon solution, inc. ? www.issi.com 5 rev. 00a, 05/02/2012 absolute maximum ratings supply voltage, v cc - 0.3v ~ +6.0v voltage at any input pin - 0.3v ~ v cc +0.3v junction temperature, t jmax +150c storage temperature range, tstg - 65c ~ +150c note: 1. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rat ings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliabilit y. electrical characteristics v cc = 2.7v ~ 5.5v, t a = 25c, unless otherwise noted. (note 1) symbol parameter condition min. typ. max. unit v cc supply voltage 2.7 5.5 v os v output offset voltage (measured differentially) v sdb = 0v, a v = 2v/v 10 mv i cc quiescent current v cc = 5.5v, no load 2.6 ma v cc = 2.7v, no load 1.2 i sd shutdown current v sdb = 0.4v 1 a f sw switching frequency 250 khz r in input resistor gain ? ? gain r in = 150k ? 2 v/v v ih high-level input voltage 1.4 v cc v v il low-level input voltage 0 0.4 v
IS31AP2010E integrated silicon solution, inc. ? www.issi.com 6 rev. 00a, 05/02/2012 electrical characteristics t a = 25c, gain = 2v/v, c in = 2 f, unless otherwise noted. (note 2) symbol parameter condition min. typ. max. unit p o output power thd+n = 10% f = 1khz, r l = 8 ? v cc = 5.0v 1.68 w v cc = 4.2v 1.2 v cc = 3.6v 0.88 thd+n = 10% f = 1khz, r l = 4 ? v cc = 5.0v 3.0 w v cc = 4.2v 2.0 v cc = 3.6v 1.5 thd+n = 1% f = 1khz, r l = 8 ? v cc = 5.0v 1.4 w v cc = 4.2v 1.0 v cc = 3.6v 0.7 thd+n = 1% f = 1khz, r l = 4 ? v cc = 5.0v 2.4 w v cc = 4.2v 1.68 v cc = 3.6v 1.2 thd+n total harmonic distortion plus noise v cc = 4.2v, p o = 0.6w, r l = 8 ? , f = 1khz 0.18 % v cc = 4.2v, p o = 1.1w, r l = 4 ? , f = 1khz 0.22 v no output voltage noise v cc = 4.2v, f = 20hz to 20khz inputs ac-grounded 80 vrms t wu wake-up time from shutdown v cc = 3.6v 32 ms snr signal-to-noise ratio p o = 1.0w, r l = 8 ? , v cc = 4.2v 91 db psrr power supply rejection ratio f = 217hz r l = 8 ? input grounded v cc = 5.0v -75 db v cc = 4.2v -70 v cc = 3.6v -66 note 1: all parts are production tested at t a = 25c. other temperature limits are guaranteed by design. note 2: guaranteed by design.
IS31AP2010E integrated silicon solution, inc. ? www.issi.com 7 rev. 00a, 05/02/2012 packaging information utqfn-9 note: all dimensions in millimeters unless otherwise stated.
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